High Frequency Multipurpose SiC MOSFET Driver

This article describes a new multipurpose Silicone-Carbide (SiC) Metal Oxide Semiconductor Field Effect Transistor (MOSFET) driver, which was designed and manufactured for high frequency operating SiC transistor as semiconductor switching device of power converters. The design the introduced driver enables to adjust output voltage levels easily by choosing integrated linear stabilizers with suitable parameters used Printed Circuit Board (PCB) mounting. insulation proposed between primary control side secondary is performed MGJ6D12H24MC muRata Ps DC-DC converter declared dv/dt immunity 80 kV/1000 ms at 1.6 kV IX3180 IXYS High Speed gate optocouplers 10 minimum common mode rejection 1.5 kV. these coupling elements accompanied safety gaps on PCB. These features enable work frequencies high-side H-bridges same in other topologies stress border. also provides possibility tripping signal, when short circuit controlled occurs.